Band Structure of CdIn_2S_4 by Heine-Abarenkov Model Potential Method
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概要
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Energy bands in the spinel-type semiconductor CdIn_2S_4 are calculated by using the Heine-Abarenkov model potential method. About 500 plane waves are used to obtain convergent results for this crystal which has 64 valence electrons in the unit cell. Semiconductor-like band structure is obtained with 0.75 eV direct gap at Γ. It is found that two types of indirect transition Λ_3⇾Γ_1, Σ_4⇾Γ_1 can occur just below this energy. Atomic characters of the bands at Γ near the gap are examined by calculating the average charge densities inside the atomic spheres from the obtained pseudo-wave-functions. It is seen that the p-levels of all the constituent atoms contribute to the valence bands near the gap.
- 社団法人日本物理学会の論文
- 1974-03-15
著者
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Inoue Masahiro
Department of Oral Implantology, Osaka Dental University
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Okazaki Makoto
Department Of Applied Physics Department Of Physics University Of Tokyo
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Inoue Masahiro
Department Of Applied Physics University Of Tokyo:(present Address) The Institute For Solid State Ph
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Inoue Masahiro
Department Of Applied Physics University Of Tokyo
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Inoue Masahiro
Department of Applied Molecular Bioscience, Yamaguchi University
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