走査型 X 線顕微鏡による GaAs FET の素子構造の観察

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This paper describes observations of semiconductor device structure by a scanning hard X-ray microscopy with a pair of aspheric mirrors as X-ray focusing optics. Scanning X-ray microscopic images are obtained from detected X-ray diffraction signal by scanning a sample while an X-ray focusing beam is fixed. Hard X-ray focusing beam is produced a pair of elliptical cylinder mirrors arranged in a crossed mirror geometry (Kirkpatrick-Baez configuration). Both mirrors are cut with 5 nm figure contour error by a numerically controlled diamond flycutting machine. A focal spot size of 2.8μm×8.3μm is obtained at a wavelength of 2.3 Å using synchrotron radiation from KEK Photon Factory 2.5 GeV storage ring. A GaAs FET with 2μm gate length is measured as a model sample of a thin film structure. X-ray scanning microscopic images are derived by diffracted X-ray detection at a crystal plane of (422). A difference in gray level of those images between gate metal and source or drain metal shows a difference of X-ray absorption ratio.
公益社団法人精密工学会の論文
1992-03-05