AlNサブマウントに形成した窒化タンタル薄膜抵抗の特性評価

概要

論文の詳細を見る
An AlN submount with a thin film resistor and high heat conductivity has been developed for precisely mounting a laser diode (LD) in an optical-disk storage system or a LD module for optical communication. The thin film resistor consisted of a tantalum-nitride (Ta_2N) thin film deposited by RF magnetron reactive sputtering at a deposition rate of 50 nm/min, a substrate temperature of 350℃, and a nitrogen pressure ratio of 6.0%. We measured the electrical properties of the Ta_2N thin film resistor on the AlN submount. The resistance was approximately 57.8 Ω and the temperature coefficient of resistance was -30.9 ppm/℃. Moreover, we found that the rate of change of resistance was less than 1.76% on average after reliability tests under conditions such as damp heat (85℃, 85%, 1000 hours), high temperature (150℃, 1000 hours), high temperature in operation (85℃, 40mA, 1000 hours), and temperature cycling (-30〜90℃, 1000 cycles). We thus concluded that the Ta_2N thin film resistor has high reliability, and such reliable characteristics make the AIN submount suitable for optical devices.
公益社団法人精密工学会の論文
2002-08-05