高炉スラグと黒鉛との反応によるSiOの発生

概要

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Effect of SiC on the generation of SiO by the reaction of CaO-SiO_2-Al_2O_3 slag with graphite was studied in the temperature range from 1700 to 1800℃. The following results were obtained : 1) Addition of SiC increases the interfacial area between the slag and graphite, total amount of SiO generation and particularly the rate of SiO generation at lower temperatures. 2) The rate of SiO generation and the interfacial area between slag and graphiteincrease by the addition of a small amount of SiC and are not remarkably affected by greaterincrease in the amount of SiC. 3) Temperature dependence of the overall rate coefficient k of SiO generation was expressed as follows : No addition of SiC : k=6.9・10^<-7>exp (-131300/RT)(mole/cm^2・s) With addition of 0.8% SiC k=1.4・10^<-3>exp (-26300/RT)(mole/cm^2・s) 4) Effect of partial pressure of carbon monoxide on the rate of SiO generation is small. However, the decrease of partial pressure of carbon monoxide increases remarkably the interfacial area between slag and graphite.silicon monoxideCaO-SiO_2-Al_2O_3slagSiO generationsilicon carbidegraphite
東北大学の論文
1986-09-30