量子井戸および細線構造の有限要素法解析

概要

論文の詳細を見る
Quantum states of confined carriers in quantum wells and wires are analyzed by means of the finite element method (FEM) In order to survey quantum effects under various potential profiles, combinations of semiconductor materials and variety of well structures, we propose a simplified finite element method where both values of potential and materials data are supposed to change maintaining constant values in every finite element. Calculation errors in this method can be suppressed within the allowable region where the fine structure of the wave functions of carriers can be clearly revealed and most of modes are distinguishable At first, reasonability of this method is theoretically certified and confirmed by the calculated results. A systematic analysis was performed thereafter for various confined quantum states of carriers and the results were summarized consistently
近畿大学の論文
1993-12-01