制動X線計測法による高濃度トリチウムのin-situ測定

概要

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To develop some in-situ measurement techniques of high level tritium, the basic characteristics of a silicon-avalanche photodiode (Si-ARD) were examined in detail using low energy X-ray emitters. We also investigated the applicability of the Si-APD to measurements of low energy bremsstrahlung X-rays caused by interactions between materials and the β-rays of tritium. The Si-APD worked well at room temperature without using any particular cooling device, and it proved to be satisfactory for the measurements of low energy X-rays below 20 keV except for significant temperature dependence of the peak energy in observed spectra, which is considered as its inherent characteristic on the one hand and owing to temperature dependence of the leakage current of the Si-APD on the other. In addition, the bremsstrahlung X-ray spectra measured using a polymer tritium source and tritium gas showed a broad single peak in the region below 15 keV. It has been revealed that the Si-APD is valuable for fabricating a compact detector system capable of detecting low energy bremsstrahlung X-rays and its easy in maintenance.