ホウ素薄膜からのトリチウム脱離挙動に対するヘリウムの予照射効果

概要

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The effects of helium pre-irradiation on trapping and release behavior of tritium implanted into thin boron films deposited on a plate of stainless steel type S316 were examined by an isothermal heating method and β-ray-induced spectrometry (BIXS). BIXS results showed that the helium pre-irradiation caused an increase in the trapping amount of surface tritium. Isothermal heating of the samples was carried out at temperatures in the range of 473 to 723K, and the decreasing rate of surface tritium was measured by tracking changes in the intensity of X-rays induced by β-rays. It was found that the decreasing rate of residual tritium obeyed first order reaction kinetics, indicating that the helium pre-irradiation has no influence on the tritium release kinetics. Apparent activation energy of the decreasing rate was determined to be 0.3 eV from temperature dependence of the decreasing rate constant, which was about two-times larger than that measured without pre-irradiation of helium.
富山大学の論文