N^+イオン,Si^+イオン注入したInP中の欠陥のアニ-リング特性

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The ion dose dependence and the furnace annealing behavior of defects produced in InP after the implantation of 200 keV N^+ (mass number=14) and Si^+ (mass number=28) ions with a dose range of 10^<13>-10^<16> cm^<-2> have been studied by using optical absorption and Raman scattering spectrometries. The optical density as a function of photon energy in the below-gap after the implantation increased proportionally with increasing ion doses and saturated at doses above 10^<15> and 10^<14> cm^<-2> for N^+ and Si^+ ions, respectively. The results of Raman scattering measurements verified that the implanted layers were in the continuous amorphous state after the implantation above these doses. The amorphous state changed to a polycrystalline state at the 250-300℃ annealing and to a monocrystalline state gradually above the 350℃ annealing for either dose.
東海大学の論文