低音での微結晶ゲルマニウム薄膜の堆積とその膜の構造的・電気的特性

概要

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The purpose of this study is twofold : to deposit crystalline Ge thin films on the glass substrate at low substrate temperature by the plasma CVD method and to examine structural and electrical properties of deposited crystalline Ge thin films. Crystalline Ge thin films were deposited at the substrate temperature of 300℃ when GeH_4 concentration diluted with H_2 was less than 1.0%. The fact that the films were crystalline was confirmed by X-ray diffraction measurement. When GeH_4 concentration was 0.1%, the value of full-width at half-maximum in the X-ray diffraction peak (Ge (111) peak) was the smallest, and the grain size was estimated to be 400 A using Scherrer's formula. It has been found that the films are n-type and the mobility of the majority carrier (electron) is about 15 cm^2/V・s, which is higher than that of poly-crystalline Ge films prepared by plasma assisted deposition at the substrate temperature of 400℃.