窒化アルミニウム基板上へのダイヤモンドの堆積

概要

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As a substrate for diamond synthesis, diamond, single crystalline Si and metals such as Cu and Mo have usually been utilized. There is reports that single-crystal beryllium oxide (BeO) and cubic boron nitride (c-BN) were used as insulating substrates. However, aluminium nitride (ALN) has not been used as a insulating substrate so far. In this study, we chose commercially available ALN an the insulating substrate, and tried to synthesize the diamond film on this substrate. It was confirmed that the ALN substrate was poly crystalline with the grain size of about 5μm or less in a diameter, possessing the properties of insulator with the resistivity of 1.5×10^11Ω・cm. The ALN substrate is cheeper than BeO and c-BN, and if diamond is deposited on this substrate, it may be very interesting and utilizing from the viewpoint of fundamental study as well as applications. The ALN substrate was scratched by the diamond paste consisting of diamond particles of about 9μm in diameter and the diamond films were synthesized on the substrate by the hot filament CVD method using CH_4 gas as the source gas. Diamond with facets was synthesized on the substrate when CH_4 gas was diluted by H_2 with the concentration of less than 1%. It has been confirmed from the X-ray diffraction measurement and laser Raman spectroscopy that the deposited films are diamond. This is the first report concerning diamond synthesis on the insulating ALN substrates.
東海大学の論文