Trapping Effects Dependence on Electron Confinement in Ultrashort GaN-on-Si High-Electron-Mobility Transistors
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2012-03-25
著者
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Rolland Paul-alain
Institute Of Electronic Microelectronic And Nanotechnology
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Rolland Nathalie
Institute Of Electronic Microelectronic And Nanotechnology
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Grimbert Bertrand
Institute Of Electronic Microelectronic And Nanotechnology
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Zegaoui Malek
Institute Of Electronic Microelectronic And Nanotechnology
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Medjdoub Farid
Institute Of Electronic Microelectronic And Nanotechnology
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Rolland Nathalie
Institut D'electronique De Microelectronique Et De Nanotechnologie (iemn) Cnrs Umr 8520 Universite De Lille 1
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DUCATTEAU Damien
Institute of Electronic, Microelectronic and Nanotechnology
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Ducatteau Damien
Institute Of Electronic Microelectronic And Nanotechnology
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- Effects of AlGaN Back Barrier on AIN/GaN-on-Silicon High-Electron-Mobility Transistors
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- Trapping Effects Dependence on Electron Confinement in Ultrashort GaN-on-Si High-Electron-Mobility Transistors
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