Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors
スポンサーリンク
概要
著者
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Grimbert Bertrand
Institute Of Electronic Microelectronic And Nanotechnology
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Zegaoui Malek
Institute Of Electronic Microelectronic And Nanotechnology
関連論文
- Above 600mS/mm Transconductance with 2.3A/mm Drain Current Density AlN/GaN High-Electron-Mobility Transistors Grown on Silicon
- Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors
- Effects of AlGaN Back Barrier on AIN/GaN-on-Silicon High-Electron-Mobility Transistors
- Trapping Effects Dependence on Electron Confinement in Ultrashort GaN-on-Si High-Electron-Mobility Transistors
- Record Combination of Power-Gain Cut-Off Frequency and Three-Terminal Breakdown Voltage for GaN-on-Silicon Devices
- Record Combination of Power-Gain Cut-Off Frequency and Three-Terminal Breakdown Voltage for GaN-on-Silicon Devices
- Hall-Effect Measurements of Sol-Gel Derived CuInS_2 Thin Films for Photovoltaic Applications
- Record Combination of Power-Gain Cut-Off Frequency and Three-Terminal Breakdown Voltage for GaN-on-Silicon Devices