Record Combination of Power-Gain Cut-Off Frequency and Three-Terminal Breakdown Voltage for GaN-on-Silicon Devices

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概要

• 論文の詳細を見る

• We report on an emerging GaN double heterostructure grown on silicon, which enables the simultaneous achievement of high breakdown voltage and high frequency performance. The use of an AlN barrier layer capped by an in situ SiN layer, and the introduction of an AlGaN back barrier layer in addition to standard field plates enabled the achievement of a remarkable three-terminal breakdown voltage V_{\text{BK}} of over 100 V together with a power gain f_{\text{max}} above 200 GHz for the first time on GaN devices grown on silicon substrates. This results in a record combination of f_{\text{max}}V_{\text{BK}} of above 20 THz V, promising breakthrough performance for widespread millimeter-wave applications.

• 2013-04-25

著者

• Grimbert Bertrand

  Institute Of Electronic Microelectronic And Nanotechnology

• Medjdoub Farid

  Institute Of Electronic Microelectronic And Nanotechnology

• Rolland Nathalie

  Institut D'electronique De Microelectronique Et De Nanotechnologie (iemn) Cnrs Umr 8520 Universite De Lille 1

• Ducatteau Damien

  Institute Of Electronic Microelectronic And Nanotechnology

• Rolland Nathalie

  Institute of Electronic, Microelectronic and Nanotechnology, Av. Poincaré, 59650 Villeneuve d'Ascq, France

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