Medjdoub Farid | Institute Of Electronic Microelectronic And Nanotechnology

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概要

• 同名の論文著者
• Institute Of Electronic Microelectronic And Nanotechnologyの論文著者

関連著者

• Grimbert Bertrand

  Institute Of Electronic Microelectronic And Nanotechnology

• Medjdoub Farid

  Institute Of Electronic Microelectronic And Nanotechnology

• Rolland Nathalie

  Institut D'electronique De Microelectronique Et De Nanotechnologie (iemn) Cnrs Umr 8520 Universite De Lille 1

• Ducatteau Damien

  Institute Of Electronic Microelectronic And Nanotechnology

• Rolland Paul-alain

  Institute Of Electronic Microelectronic And Nanotechnology

• Rolland Nathalie

  Institute Of Electronic Microelectronic And Nanotechnology

• Zegaoui Malek

  Institute Of Electronic Microelectronic And Nanotechnology

• DUCATTEAU Damien

  Institute of Electronic, Microelectronic and Nanotechnology

• MEDJDOUB Farid

  Institute of Electronic, Microelectronic and Nanotechnology

• ZEGAOUI Malek

  Institute of Electronic, Microelectronic and Nanotechnology

• WALDHOFF Nicolas

  Institute of Electronic, Microelectronic and Nanotechnology

• GRIMBERT Bertrand

  Institute of Electronic, Microelectronic and Nanotechnology

• Waldhoff Nicolas

  Institute Of Electronic Microelectronic And Nanotechnology

• Rolland Nathalie

  Institute of Electronic, Microelectronic and Nanotechnology, Av. Poincaré, 59650 Villeneuve d'Ascq, France

• Grimbert Bertrand

  Institute of Electronic, Microelectronic and Nanotechnology, Av. Poincaré, 59650 Villeneuve d'Ascq, France

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著作論文

• Above 600mS/mm Transconductance with 2.3A/mm Drain Current Density AlN/GaN High-Electron-Mobility Transistors Grown on Silicon
• Effects of AlGaN Back Barrier on AIN/GaN-on-Silicon High-Electron-Mobility Transistors
• Trapping Effects Dependence on Electron Confinement in Ultrashort GaN-on-Si High-Electron-Mobility Transistors
• Record Combination of Power-Gain Cut-Off Frequency and Three-Terminal Breakdown Voltage for GaN-on-Silicon Devices
• Record Combination of Power-Gain Cut-Off Frequency and Three-Terminal Breakdown Voltage for GaN-on-Silicon Devices
• Record Combination of Power-Gain Cut-Off Frequency and Three-Terminal Breakdown Voltage for GaN-on-Silicon Devices

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