Study of Self Cross-Link Bottom Antireflective Coating and Gap Fill Materials for Sublimate Defect Reduction in ArF Lithography

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-03-15

著者

• Takei Satoshi

  Nissan Chemical Ind. Ltd. Toyama Jpn

• TAKEI Satoshi

  Electronic Materials Research Laboratories, Nissan Chemical Industries, Ltd.

• SHINJO Tetsuya

  Electronic Materials Research Laboratories, Nissan Chemical Industries, Ltd.

• SAKAIDA Yasushi

  Electronic Materials Research Laboratories, Nissan Chemical Industries, Ltd.

• Shinjo Tetsuya

  Nissan Chemical Industries Ltd. Toyama Jpn

関連論文

• Study of Self Cross-Link Bottom Antireflective Coating and Gap Fill Materials for Sublimate Defect Reduction in ArF Lithography
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• Gap fill materials using cyclodextrin derivatives in ArF lithography
• Characterization of gap fill materials for planarizing substrate in via-first dual damascene lithography process
• Bottom Extreme-Ultraviolet-Sensitive Coating for Evaluation of the Absorption Coefficient of Ultrathin Film
• Step and Flash Nano Imprint Lithography of 80 nm Dense Line Pattern Using Trehalose Derivative Resist Material
• Ultraviolet Nano Imprint Lithography Using Fluorinated Silicon-Based Resist Materials

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