Step and Flash Nano Imprint Lithography of 80 nm Dense Line Pattern Using Trehalose Derivative Resist Material
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概要
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High resolution trehalose derivative resist which had specific desired properties was successfully developed for step and flash nano imprint lithography as one of advanced alternative lithography techniques. Step and flash nano imprint lithography is expected to be a high resolution, thin residual resist thickness, an ambient temperature and cost reduction technique in manufacturing. Excellent 80 nm dense line patterning was demonstrated in nano imprint lithography with ultraviolet crosslinking process. Lower film thickness shrinkage of the newly developed liquid trehalose derivative resist than that of acrylate type resist was one of key to achieve high resolution nano imprint patterns.
- Japan Society of Applied Physicsの論文
- 2010-02-25
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