MOVPE Growth of High Quality GaN/InGaN Single Quantum Well Structure Using Misoriented SiC Substrate
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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Kume Motoyuki
Department Of Electrical And Electronic Engineering Gifu University
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Kume M
Department Of Electrical And Electronic Engineering Gifu University
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Ban Yuzaburoh
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Takeishi Hidemi
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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ISHIBASHI Akihiko
Advanced Technology Research Laboratories, Matsushita Electric Ind.Co., Ltd.
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ISHIBASHI Akihiko
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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UEMURA Nobuyuki
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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KUME Masahiro
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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Uemura Nobuyuki
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Ishibashi Akihiko
Advanced Technology Research Laboratories Matsushita Electric Ind.co. Ltd.
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