Time Dependent Anomalous Charge Loss Modeling in Flash Memories and an Accelerated Testing Procedure

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概要

• 論文の詳細を見る
• 2001-09-25

著者

• Schuler Franz

  Infineon Technologies Affiliated To Imec

• TEMPEL Georg

  Infineon Technologies, affiliated to IMEC

• MELZNER Hanno

  Infineon Technologies, Otto-Hahn-Ring

• HENDRICKX Paul

  IMEC

• WELLEKENS Dirk

  IMEC

• HENDRICKX Paul

  IMEC vzw.

• WELLEKENS Dirk

  IMEC vzw.

• LORENZINI Martino

  IMEC vzw.

• VAN HOUDT

  IMEC vzw.

• Tempel Georg

  Infineon Technologies Affiliated To Imec

• Van Houdt

  Imec

• Van Houdt

  Imec Leuven Spdt Division

• Melzner Hanno

  Infineon Technologies Otto-hahn-ring

• Wellekens Dirk

  IMEC Leuven, SPDT Division, Kapeldreef 75, B-3001 Leuven, Belgium

関連論文

• Failure Rate Prediction and Accelerated Detection of Anomalous Charge Loss in Flash Memories by Using an Analytical Transient Physics-Based Charge Loss Model
• Time Dependent Anomalous Charge Loss Modeling in Flash Memories and an Accelerated Testing Procedure
• Feasibility analysis of direct tunneling through medium-κ dielectrics for embedded RAM applications
• Performance and Reliability of 0.35μm/0.25μm HIMOS^【○!R】 Technology for Embedded Flash Memory Applications
• Performance of Direct Tunneling Floating Gate Memory with Medium-$\kappa$ Dielectrics for Embedded-Random-Access Memory Applications
• Enhanced Tunneling Current Effect for Nonvolatile Memory Applications
• Failure Rate Prediction and Accelerated Detection of Anomalous Charge Loss in Flash Memories by Using an Analytical Transient Physics-Based Charge Loss Model

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