Failure Rate Prediction and Accelerated Detection of Anomalous Charge Loss in Flash Memories by Using an Analytical Transient Physics-Based Charge Loss Model
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-04-30
著者
-
Schuler Franz
Infineon Technologies Affiliated To Imec
-
TEMPEL Georg
Infineon Technologies, affiliated to IMEC
-
MELZNER Hanno
Infineon Technologies, Otto-Hahn-Ring
-
JACOB Michael
Infineon Technologies
-
HENDRICKX Paul
IMEC
-
WELLEKENS Dirk
IMEC
-
HOUDT Jan
IMEC
-
Tempel Georg
Infineon Technologies Affiliated To Imec
-
Melzner Hanno
Infineon Technologies Otto-hahn-ring
関連論文
- Failure Rate Prediction and Accelerated Detection of Anomalous Charge Loss in Flash Memories by Using an Analytical Transient Physics-Based Charge Loss Model
- Time Dependent Anomalous Charge Loss Modeling in Flash Memories and an Accelerated Testing Procedure
- A CMOS DC Voltage Doubler with Nonoverlapping Switching Control
- Failure Rate Prediction and Accelerated Detection of Anomalous Charge Loss in Flash Memories by Using an Analytical Transient Physics-Based Charge Loss Model