Studies of Switching Kinetics in Ferroelectric Thin Films
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-11-15
著者
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Migliorato Piero
Department Of Engineering University Of Cambridge
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JIANG Anquan
Symetrix Center for Ferroics, Department of Earth Science, University of Cambridge
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DAWBER Matthew
Symetrix Center for Ferroics, Department of Earth Science, University of Cambridge
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SCOTT James
Symetrix Center for Ferroics, Department of Earth Science, University of Cambridge
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WANG Can
Institute of Solid State Physics, Chinese Academy of Science
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GREGG Marty
Condensed Matter Physics and Material Science Research Division, School of Mathematics and Physics,
関連論文
- Extraction of Trap State at the Oxide-Silicon Interface and Grain Biundary in Polycrystallune Silicon Thin-Film Transistors
- Extraction of Trap States at the Oxide-Silicon Interface and Grain Boundary for Polycrystalline Silicon Thin-Film Transistors : Semiconductors
- Studies of Switching Kinetics in Ferroelectric Thin Films
- Extraction of Trap States at the Oxide-Silicon Interface and Grain Boundary in Polycrystalline Silicon Thin-Film Transistors
- Studies of Switching Kinetics in Ferroelectric Thin Films