Studies of Switching Kinetics in Ferroelectric Thin Films

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概要

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• Experimental studies are reported concerning the importance of interfacial capacitance (including electrode screening, space-charge layers, and/or chemically discrete dead layers) on domain switching behaviour in thin films of ferroelectric lead zirconate-titanate (PZT), strontium bismuth tantalate (SBT), and barium strontium titanate (BST). Emphasis is placed upon studies at applied field values very near the coercive field $E_{\text{c}}$, asymmetry in fatigue for positive and negative polarity coercive fields, and in the case of BST, of the coexistence of ferroelectric and paraelectric phases. Studies of dielectric loss show important correlations between tan $\delta$ and fatigue (polarization decrease) as a function of bipolar switching cycles $N$. This is a priori not obvious, since the former is a linear response and the latter, a nonlinear response. Modelling of enlarged interfacial space-charge layers in PZT films and chemically distinct dead (paraelectric) layers in BST films shows contradictory tendencies of coercive-voltage changes with the growth of passive layers.

• 2003-11-15

著者

• Migliorato Piero

  Department Of Engineering University Of Cambridge

• SCOTT James

  Symetrix Center for Ferroics, Department of Earth Science, University of Cambridge

• Gregg Marty

  Condensed Matter Physics And Material Science Research Division School Of Mathematics And Physics Th

• Jiang Anquan

  Symetrix Center For Ferroics Department Of Earth Science University Of Cambridge

• Dawber Matthew

  Symetrix Center For Ferroics Department Of Earth Science University Of Cambridge

• Wang Can

  Institute Of Solid State Physics Chinese Academy Of Science

• Migliorato Piero

  Department of Engineering, University of Cambridge, Cambridge CB2 1PZ, UK

• Dawber Matthew

  Symetrix Centre for Ferroics, Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge CB2 3EQ, UK

関連論文

• Extraction of Trap State at the Oxide-Silicon Interface and Grain Biundary in Polycrystallune Silicon Thin-Film Transistors
• Extraction of Trap States at the Oxide-Silicon Interface and Grain Boundary for Polycrystalline Silicon Thin-Film Transistors : Semiconductors
• Studies of Switching Kinetics in Ferroelectric Thin Films
• Extraction of Trap States at the Oxide-Silicon Interface and Grain Boundary in Polycrystalline Silicon Thin-Film Transistors
• Studies of Switching Kinetics in Ferroelectric Thin Films

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