Electrical Conduction in Ti-TiO_2-Au Thin-Film Device
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概要
- 論文の詳細を見る
Experimental research carried out on a thin-film Ti-TiO<SUB>2</SUB>-Au device revealed the following. The device, after the electrical forming process, has a unique I-V property with unsymmetrical hysteresis loops. When a reverse bias voltage (the Au upper electrode becomes negative) is applied to the device, the peak value of the reverse voltage above the threshold voltage and its application period influence the growth of a high conduction state of the I-V property. The peak value of the forward voltage in a low conduction state and its application period control the subsequent I-V behavior in the reverse voltage region. The temperature dependence of the I-V curve was also examined. Finally, the source of the changes in the electrical conduction of the device is discussed in relation to the Ti whiskers growing in a void of the TiO<SUB>2</SUB> layer, which were discovered during the examination.
- 日本真空協会の論文
- 1994-06-20
著者
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Yamashita Mutsuo
Department Of Electronics Engineering
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Inoue Tohru
Department Of Chemistry Faculty Of Science Fukuoka University
-
TSUKIDE Osamu
Department of Electronics Engineering
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Inoue Tohru
Department Of Electronics Engineering
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