A Simple Ohmic-Contact Formation Technology using Phosphine Plasma Treatment for Top-Gate Amorphous-Silicon Thin-Film Transistors
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-06-01
著者
-
Aoki S
Univ. Tsukuba Ibaraki
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UGAI Yasuhiro
Hosiden and Philips Display Corporation
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YUKAWA Teizo
Hosiden and Philips Display Corporation
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AMANO Kazuaki
Hosiden and Philips Display Corporation
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AOKI Shigeo
Hosiden and Philips Display Corporation
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- A Simple Ohmic-Contact Formation Technology using Phosphine Plasma Treatment for Top-Gate Amorphous-Silicon Thin-Film Transistors