A Simple Ohmic-Contact Formation Technology using Phosphine Plasma Treatment for Top-Gate Amorphous-Silicon Thin-Film Transistors

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概要

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• The effects of exposing patterned indium-tin-oxide (ITO) on amorphous silicon oxide (a-SiOx) to a phosphine (PH3) plasma has been investigated. Phosphorous atoms react with ITO to form InPOx and InP, with a much smaller number being deposited on a-SiOx. If amorphous silicon (a-Si) is then deposited onto these layers by plasma enhanced chemical vapor deposition, phosphorous atoms from the ITO are incorporated into the a-Si in the region of the ITO. This effectively dopes the a-Si to form good ohmic contacts between the ITO and a-Si layers. In contrast, the number of phosphorus atoms incorporated into a-Si directly above a-SiOx is too small to have an effect on the electrical properties of a-Si. The doping mechanism for the ITO and a-Si is discussed, and an explanation given as to how these features can be used to mass produce high performance top-gate a-Si thin film transistors using only three photomask steps.

• 1998-06-15

著者

• YUKAWA Teizo

  Hosiden and Philips Display Corporation

• AMANO Kazuaki

  Hosiden and Philips Display Corporation

• AOKI Shigeo

  Hosiden and Philips Display Corporation

• Ugai Yasuhiro

  Hosiden And Philips Display Corp.

• Ugai Yasuhiro

  Hosiden and Philips Display Corporation, 4-3-1 Takatsukadai Nishi-ku, Kobe, Hyogo 651-2271 Japan

• Aoki Shigeo

  Hosiden and Philips Display Corporation, 4-3-1 Takatsukadai Nishi-ku, Kobe, Hyogo 651-2271 Japan

• Yukawa Teizo

  Hosiden and Philips Display Corporation, 4-3-1 Takatsukadai Nishi-ku, Kobe, Hyogo 651-2271 Japan

• YUKAWA Teizo

  Hosiden and Philips Display Corp.

• Amano Kazuaki

  Hosiden and Philips Display Corporation, 4-3-1 Takatsukadai Nishi-ku, Kobe, Hyogo 651-2271 Japan

関連論文

• Top-Gate Staggered Amorphous Silicon Thin-Film Transistors: Series Resistance and Nitride Thickness Effects
• A Simple Ohmic-Contact Formation Technology using Phosphine Plasma Treatment for Top-Gate Amorphous-Silicon Thin-Film Transistors
• Reduced Process Method for Thin-Film-Transistor Liquid-Crystal Display (TFT-LCD) with Dry-Etching Tapered ITO Data Bus Lines
• Influence of the Amorphous Silicon Thickness on Top Gate Thin-Film Transistor Electrical Performances
• A Simple Ohmic-Contact Formation Technology using Phosphine Plasma Treatment for Top-Gate Amorphous-Silicon Thin-Film Transistors

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