Influence of the Amorphous Silicon Thickness on Top Gate Thin-Film Transistor Electrical Performances
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概要
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We have analyzed the influence of the hydrogenated amorphous silicon (a-Si:H) thickness on the electrical performances of top gate thin-film transistors (TFTs). We have observed that, when the a-Si:H thickness increases, the threshold voltage and the subthreshold slope decrease. The modification of the TFT apparent field-effect mobility has also been investigated: we have shown that it first increases with the a-Si:H thickness, and then decreases for thicker a-Si:H films. This change of electrical performances is most likely associated with both the variation of a-Si:H microstructure during the film depositions and the effect of parasitic source and drain series resistances. We have demonstrated that for a given TFT geometry, it is therefore possible to define an optimum a-Si:H thickness ensuring maximum TFT electrical performances, and that this optimum thickness increases significantly with the TFT channel length.
- 2001-02-15
著者
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Chiang Chun-sung
The University Of Michigan Department Of Electrical Engineering And Computer Science Solid State Ele
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Kanicki Jerzy
The University Of Michigan Department Of Electrical Engineering And Computer Science Solid State Ele
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Ugai Yasuhiro
Hosiden And Philips Display Corp.
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Chiang Chun-Sung
The University of Michigan, Department of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, Ann Arbor, MI 48109, USA
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Martin Sandrine
The University of Michigan, Department of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, Ann Arbor, MI 48109, USA
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Nahm Jeong-Yeop
The University of Michigan, Department of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, Ann Arbor, MI 48109, USA
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Li Tong
The University of Michigan, Department of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, Ann Arbor, MI 48109, USA
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Ugai Yasuhiro
Hosiden and Philips Display Corp. 3-1, Takatsukadai, 4-chome, Nishi-ku, Kobe 651-22, Japan
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Kanicki Jerzy
The University of Michigan, Department of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, Ann Arbor, MI 48109, USA
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