Study of Epitaxy by RHEED(Reflection High Energy Electron Diffraction)-TRAXS(Total Reflection Angle X-Ray Spectroscopy)
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概要
- 論文の詳細を見る
- 1995-07-10
著者
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Ino Shozo
Department Of Physics Faculty Of Science University Of Tokyo
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Ino Shozo
Department Of Physics Graduate School Of Science University Of Tokyo
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INO Shozo
Department of Physics, Graduate School of Science, University of Tokyo
関連論文
- Glancing Angle Dependence of the X-Ray Emission Measured under Total Reflection Angle X-Ray Spectroscopy (TRAXS) Condition during Reflection High Energy Electron Diffraction Observation
- New Models for the 7×7,5×5,2×8 Structures on Si(111) and Ge(111) Surfaces
- Chemical Analysis of Surfaces by Total-Reflection-Angle X-Ray Spectroscopy in RHEED Experiments (RHEED-TRAXS)
- Theory of Transmission Coefficient of X-Rays Evanescent Wave for Grazing Incidence
- Change of Surface Electronic States Induced by Li and K Adsorption on the Si(111)7×7 Structure
- Observations of the Au/Si(111) System with a High-Resolution Ultrahigh-Vacuurn Scanning Electron Microscope
- Reflection High-Energy Electron Diffraction Study of the Growth of Ge on the Ge(111) Surface
- Observation of In Growth Modes on Si(111)-√×√-Ga Using an Ultrahigh-Vacuum Scanning Electron Microscope
- Surface Reconstruction on a Clean Si(110) Surface Observed by RHEED
- Formation of Si(111)-6×6 -Au Structure without Using a Vacuum Evaporation Technique Observed by Reflection High-Energy Electron Diffraction
- Atomic Depth Distribution Analysis of In and Ga on Si(111) during Epitaxial Growth and New Surfactant-Mediated Epitaxy
- Study of Epitaxy by RHEED(Reflection High Energy Electron Diffraction)-TRAXS(Total Reflection Angle X-Ray Spectroscopy)