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Yokohama Research Center Association Of Super-advanced Electronics Technologies:(present Address)uls | 論文
- Fabrication of 0.1 μm Patterns Using an Alternating Phase Shift Mask in ArF Excimer Laser Lithography
- Study of the Bottom Antireflective Coating Process Using a High-Transparency Resist for ArF Excimer Laser Lithography
- Challenges to 0.1 μm Resolution Capability in ArF Single Layer Resist Process with Weak Resolution Enhancement Techniques
- Sob-0.1-μm-Pattern Fabrication Using a 193-nm Top Surface Imaging (TSI) Process
- Theoretical Calculations of Sensitivity of Deprotection Reactions for Acrylic Polymers for 193nm Lithography II : Protection Groups Containing an Adamantyl Unit
- Nonhomogeneous Pattern Formation in the Dissolution Processes of Novolak-Diazonaphthoquinone Resists
- Approach to Next-Generation Optical Lithography
- Contrast Enhancement based on Acid Equilibrium for Chemically Amplified Resists