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VLSI Development Division, NEC Corporation | 論文
- Uniform Electron Cyclotron Resonance Plasma Generation for Precise ULSI Patterning
- Dependence of Electron Cyclotron Resonance Plasma Characteristics on Introduced Microwave Conditions
- Ion Current Density and Ion Energy Distributions at the Electron Cyclotron Resonance Position in the Electron Cyclotron Resonance Plasma
- Ion Energy Distributions at the Electron Cyclotron Resonance Position in Electron Cyclotron Resonance Plasma
- Dependence of ECR Plasma Etching Characteristics on Sub Magnetic Field and Substrate Position
- Silicon Selective Epitaxial Growth over Thick SiO_2 Islands
- Junction Leakage Current in BF^+_2-Implanted, Rapid-Thermal-Annealed Diodes
- A Unified Process and Device Simulation System - P & D Workbench -