Junction Leakage Current in BF^+_2-Implanted, Rapid-Thermal-Annealed Diodes

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概要

• 論文の詳細を見る

• Junction leakage current was studied in shallow p^+-n diodes formed by using BF_2-implantation and rapid thermal annealing (RTA). It is s hown that the bulk leakage component is 3 to 4 times larger in BF^+_2-implanted diodes than in B^+-implanted diodes. Dislocations created in the BF^+_2-implanted layer during the RTA are not the direct cause of this leakage increase. It was also found that the surface leakage component is increased by the RTA. Rapid heat treatment may increase interface states and/or g-r centers in the Si/SiO_2 interface layer.

• 社団法人応用物理学会の論文
• 1986-08-20

著者

• Abiko Hitoshi

  Vlsi Development Division Nec Corporation

• Kanamori Masaru

  Vlsi Development Division Nec Corporation

• MIKOSHIBA Hiroaki

  VLSI Development Division, NEC Corporation

• Mikoshiba Hiroaki

  Vlsi Development Division Nec Corporation

関連論文

• Junction Leakage Current in BF^+_2-Implanted, Rapid-Thermal-Annealed Diodes

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