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Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corp. | 論文
- High-Spatial-Resolution Machining Utilizing Atmospheric Pressure Plasma : Machining Characteristics of Silicon
- Polishing Characteristics of Silicon Carbide by Plasma Chemical Vaporization Machining
- Ultraprecision Machining Utilizing Numerically Controlled Scanning of Localized Atmospheric Pressure Plasma
- Density of States of Single-Walled Carbon Nanotubes Grown on Metal Tip Apex
- Scanning Tunneling Microscopy and Spectroscopy Study of a Steep Facet Surface on Ge Nanocrystal Grown on Si(111)
- Scanning Tunneling Spectroscopy Study of the ZnO(0001)-Zn Surface
- Electrical Characterization of Metal-Coated Carbon Nanotube Tips
- Hard X-ray Diffraction-Limited Nanofocusing with Kirkpatrick-Baez Mirrors
- Two-dimensional Submicron Focusing of Hard X-rays by Two Elliptical Mirrors Fabricated by Plasma Chemical Vaporization Machining and Elastic Emission Machining
- Effect of Hydrogen Plasma Treatment on Implantation Damage in Diamond Films Grown by Chemical Vapour Deposition
- Characterization of Homoepitaxial Diamond Films Grown from Carbon Monoxide
- Growth and Optical Characterization of Cr^YAB and Cr^YGAB Crystal for New Tunable and Self-Frequency Doubling Laser
- Metal-coated Carbon Nanotube Tips for Nanoscale Electrical Measurements
- Metal-Coated Carbon Nanotube Tip for Scanning Tunneling Microscope
- Pt/Ba_xSr_TiO_3/Pt Capacitor Technology for 0.15μm Embedded Dynamic Random Access Memory
- Low Temperature BST-CVD Process for the Concave-Type Capacitors Designed for Logic-Base-Embedded DRAMs
- Extendibility of Ta_2O_5 Metal-Insulator-Metal Capacitor Using Ru Electrode
- Ru-Ta_2O_5MIM Capacitor toward 0.1μm DRAM Cell
- Structural Study of Chemical-Vapor-Deposited Diamond Surface by High-Resolution Electron Microscopy
- Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WN_x Gate Formation