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ULSI Process Technology Development Center, Matsushita Electric Industrial Co., Ltd. | 論文
- Extendibility of Ta_2O_5 Metal-Insulator-Metal Capacitor Using Ru Electrode
- Ru-Ta_2O_5MIM Capacitor toward 0.1μm DRAM Cell
- Transformation of Dense Contact Holes during SiO_2 Etching
- Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WN_x Gate Formation
- Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WNx Gate Formation
- Metal-Organic Chemical Vapor Deposition of HfO_2 by Alternating Supply of Tetrakis-Diethylamino-Hafnium and Remote-Plasma Oxygen
- Contact Hole Etch Scaling toward 0.1 μm
- Spatial and Temporal Behavior of Radicals in Inductively Coupled Plasm for SiO_2 Etching
- Highly Selective SiO2 Etching Using Inductively Coupled Plasma Source with a Multispiral Coil
- Impact of Hf Metal Predeposition on the Properties of HfO2 Grown by Physical and Chemical Vapor Deposition
- Extendibility of Ta2O5 Metal-Insulator-Metal Capacitor Using Ru Electrode
- Metalorganic Chemical Vapor Deposition of HfO2 Films through the Alternating Supply of Tetrakis(1-methoxy-2-methyl-2-propoxy)-Hafnium and Remote-Plasma Oxygen