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Toyota Central Res. And Dev. Lab. Inc. Aichi Jpn | 論文
- Fabrication and Characterization of Nb/Nb Oxides-Based Single Electron Transistors (SETs)
- Side Gate Single Electron Transistor with Multi-Islands Structure Operated at Room Temperature Made by STM/AFM Nano-Oxidation Process
- Room Temperature Operation of Single Electron Transistor Made by STM Nano-Oxidation Process
- V-Shaped Gate High Electron Mobility Transistor (VHEMT)
- Accumulation-Mode GaAlAs/GaAs Bipolar Transistor
- Digital Etching Using KrF Excimer Laser: Approach to Atomic-Order-Controlled Etching by Photo Induced Reaction
- Reversible Reconstruction Changes in GaAs Surfaces due to Hydrogen Termination
- Study of Surface Processes in the Digital Etching of GaAs
- XANES Analysis of Optical Activation Process of Er in Si:Er2O3 Thin Film:Electronic and Structural Modifications around Er (Proceedings of the Second International Conference on SRMS(Synchrotron Radiation in Materials Science)(2))
- 結晶成長の物理I : 融液からの理想的結晶成長
- Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System : Etching and Deposition Technology
- Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System
- Dependence of Magnetic Shielding Property on Critical Current Density
- Magnetic Shielding Propertiy of Bi(Pb)-Sr-Ca-Cu-O Superconducting Tube
- Deep-Level Characterization of Tris(8-Hydroxyquinoline) Aluminum with and without Quinacridone Doping
- Three Dimensional CoO fine Particle Formation in CO_2 Gas
- 28pTE-11 磨り潰しによる完全不斉な結晶成長(28pTE 結晶成長,領域9(表面・界面,結晶成長))
- 21pVC-7 揺動に誘起される開放系でのキラル対称性の破れの増大(21pVC 確率過程・確率モデル,領域11(統計力学,物性基礎論,応用数学,力学,流体物理))
- NORDITAプログラム「完全不斉の起源」に参加して(会員の声)
- 23aWE-10 揺動に誘起されたホモキラル化(確率過程・確率モデル,領域11,統計力学,物性基礎論,応用数学,力学,流体物理)
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