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Toshiba Research And Development Center Toshiba Corporation | 論文
- High-Efficiency GaP Green LED's with Double n-LPE Layers
- Surface Acoustic Wave Device Applications to Consumer Electronics
- 0.05 μm (3σ) Overlay Accuracy Through-the-lens Alignment in an Excimer Laser Lithography System
- A chromatic Aberration-Free Heterodyne Alignment for Optical Lithography : Lithography Technology
- A Chromatic Aberration-Free Heterodyne Alignment for Optical Lithography
- Growth and Properties of Li_2B_4O_7 Single Crystal for SAW Device Applications : V: PIZOELECTRIC VIBRATOR
- SAW Propagation Characteristics on Li_2B_4O_7 : Surface Acoustic Waves and Devices
- Effects of Specific Surface Area of Starting Pre-Calcined Dielectric Powders on Sintering Behavior and Dielectric Properties of Relaxor / Modeified-BaTiO_3 Composite : F: FERROELECTRIC MATERIALS
- SAW Resonator and Resonator Filter on Li_2B_4O_7 Substrate : SAW and BAW Materials, Devices and Theories
- 2 GHz, High Power Silicon SIT's : A-6: CHARGE TRANSFER DEVICES/SIT AND OTHER DEVICES
- LiTaO_3 Substrate Fabrication and Characterization for Pyroelectric Sensors : FERROELECTRIC MATERIALS
- A New Ferromagnetic Amorphous Oxide of the La-Sr-Mn-B-O System : Magnetism, Magnetic Materials and Devices
- Anomalous Temperature Behavior of the Elastic Constant C_ in LiTaO_3
- Elastic Properties of LiTaO_3
- Elastic and Dielectric Properties of LiNbO_3
- Photoacoustic Signal from Subsurface Defects in Ceramics
- High Temperature Elastic Moduli of Si_3N_4 Ceramics
- Temperature Dependence of Elastic Stiffness C_ in LiNbO_3
- A Multi-Channel FET with a New Diffusion Type Structure : A-5: FIELD EFFECT TRANSISTORS (II)
- Stripe Shaped Crystal Growth and Its Model of Silicon Films on Silicon Nitride Layer by Scanning Electron Beam Annealing