2 GHz, High Power Silicon SIT's : A-6: CHARGE TRANSFER DEVICES/SIT AND OTHER DEVICES
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1980-04-30
著者
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Okano Susumu
Toshiba Research And Development Center Toshiba Corporation
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SHINO Toshio
Toshiba Research and Development Center Toshiba Corporation
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KAMO Hisao
Toshiba Research and Development Center Toshiba Corporation
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AOKI Kiyoshi
Toshiba Research and Development Center Toshiba Corporation
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Aoki Kiyoshi
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
関連論文
- 2 GHz, High Power Silicon SIT's : A-6: CHARGE TRANSFER DEVICES/SIT AND OTHER DEVICES
- A Multi-Channel FET with a New Diffusion Type Structure : A-5: FIELD EFFECT TRANSISTORS (II)