スポンサーリンク
Tokyo Ohka Kogyo Co., Ltd., 1590 Tabata, Samukawa, Koza, Kanagawa 253-0114, Japan | 論文
- Low-$E_{\text{a}}$ Chemical Amplification Resists for 193 nm Lithography
- Reactivity of Halogenated Resist Polymer with Low-Energy Electrons
- Effect of Molecular Structure on Depth Profile of Acid Generator Distribution in Chemically Amplified Resist Films
- Single-Component Chemically Amplified Resist Based on Dehalogenation of Polymer
- Potential Cause of Inhomogeneous Acid Distribution in Chemically Amplified Resists for Post Optical Lithography
- Proton Dynamics in Chemically Amplified Electron Beam Resists
- Investigation of Interfaces between Insulator and Active Layer, and between Active Layer and Electrodes in n-Type Organic Field-Effect Transistors
- Effect of Hydroxyl Group of Polymer Gate Insulators on Characteristics of Dihexylsexithiophene Organic Field-Effect Transistors Using Poly(p-silsesquioxane) Derivatives
- Effect of Acid Diffusion and Polymer Structure on Line Edge Roughness
- EUV Resist Chemical Reaction Analysis using SR
- EUV Resist Chemical Analysis by Soft X-ray Absorption Spectroscopy for High Sensitivity Achievement