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The Institute of Scientific and industrial Research, Osaka University | 論文
- Improved Growth Kinetic Model for Metalorganic Molecular Beam Epitaxy Using Triethylgallium
- Selective Area Epitaxy of GaSb by Metal-Organic Molecular Beam Epitaxy
- Structures and magnetic properties of oriented Fe/Au and Fe-Pt nanoparticles on a-Al_2O_3
- Fabrication of Oriented Fe Nanocrystals
- Feasibility Study on High-Sensitivity Chemically Amplified Resist by Polymer Absorption Enhancement in Extreme Ultraviolet Lithography
- Relationship between Sensitivities of Chemically Amplified Resist Based on Adamantane Derivatives upon Exposure to ArF Excimer Laser, Electron Beam, and Extreme Ultraviolet Radiation
- Enhancement of Acid Production in Chemically Amplified Resist for Extreme Ultraviolet Lithography
- Difference in Reaction Schemes in Photolysis of Triphenylsulfonium Salts between 248nm and Dry/Wet 193nm Resists
- Polymer-Structure Dependence of Acid Generation in Chemically Amplified Extreme Ultraviolet Resists
- Evaluation of Chiral Amino Acid Discrimination by a Permethylated Cyclic Tetrasaccharide, cyclo-{→6)-α-D-Glcp-(1→3)-α-D-Glcp-(1→6)-α-D-Glcp-(1→3)-α-D-Glcp-(1→}, Using FAB Mass Spectrometry
- 3, 5-Di-tert-butylphenyl (D^tBuP) Group as a Protecting Group for Kinetic Stabilization.Preparation and Characterizatioin of 2, 6-Naphthoquinone Skeleton
- Formation of InAs Wires and Dots on Vicinal GaAs (110) Surfaces with Giant Steps by Molecular Beam Epitaxy
- Low-Energy Electron Diffraction Analysis on Initial Stages of Ge Growth on Si(111)(1×1) -As and As-Desorbed Si(111)(1×1) Surfaces
- X-Ray Color Movie Using the Charge-Coupled Device with a Direct X-Ray Detection Method
- Fabrication and Structure of Nucleic Acid Base Thin Films
- Initial Stages of GaAs Molecular Beam Epitaxy Growth on Porous Si
- Initial Stages of GaAs MBE Growth on Si(111)(√3×√3)-Ga Surfaces
- Reduction of Long-range Interactions using Carbon Nanotube Probes in Biological Systems
- Atomic Layer Controlled Digital Etching of Silicon : Etching and Deposition Technology
- Atomic Layer Controlled Digital Etching of Silicon