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The Institute of Industrial Science, The University of Tokyo | 論文
- Tradeoffs between Error Performance and Decoding Complexity in Multilevel 8-PSK Codes with UEP Capabilities and Multistage Decoding
- Fabrication of Si Nanostructures for Single Electron Device Applications by Anisotropic Etching
- High Performance Accumulated Back-Interface Dynamic Threshold SOI MOS-FET's (AB-DTMOS) with Large Body Effect at Low Supply Voltage
- Efficient and Secure Multiparty Generation of Digital Signatures Based on Discrete Logarithms (Special Section on Discrete Mathematics and Its Applications)
- Suppression of Short Channel Effect in Triangular Parallel Wire Channel MOSFETs(Special Issue on Advanced Sub-0.1μm CMOS Devices)
- Effects of Dot Size and its Distribution on Electron Number Control in Metal-Oxide-Semiconductor-Field-Effect-Transistor Memories Based on Silicon Nanocrystal Floating Dots
- Characteristic Distributions of Narrow Channel Metal-Oxide-Semiconductor Field-Effect Transistor Memories with Silicon Nanocrystal Floating Gates
- Asymptotic Bounds for Unidirectional Byte Error-Correcting Codes (Special Section on Information Theory and Its Applications)
- Construction Techniques for Error-Control Runlength-Limited Block Codes
- Occlusion Robust and Illumination Invariant Vehicle Tracking for Acquiring Detailed Statistics from Traffic Images(Special Issue on Information System Technologies for ITS)
- Measurement of Energetic and Lateral Distribution of Interface State Density in Fully-Depleted Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
- High-Performance Accumulated Back-Interface Dynamic Threshold SOI MOSFET (AB-DTMOS) with Large Body Effect at Low Supply Voltage
- Measurement of Energetic and Lateral Distribution of Interface State Density in FD SOI MOSFETs
- Suppression of Geometric Component of Charge Pumping Current in Thin Film Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
- New Measurement Technique for Sub-Bandgap Impact Ionization Current by Transient Characteristics of Partially Depleted SOI MOSFETs
- Extremely Large Amplitude of Random Telegraph Signals in a Very Narrow Split-Gate MOSFET at Low Temperatures
- Key Agreement Protocols Resistant to a Denial-of-Service Attack
- Origin of Critical Substrate Bias in Variable Threshold Voltage Complementary MOS (VTCMOS)
- Origin of Critical Substrate Bias in Variable Threshold Voltage CMOS
- Cryptanalysis of TOYOCRYPT-HS1 Stream Cipher(Special Section on Cryptography and Information Security)