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Sumitomo Electric Industries, Ltd. | 論文
- Dielectric Properties of SrTiO_3 Thin Films Grown by Ozone-Assisted Molecular Beam Epitaxy
- Finding Useful Detours in Geographical Databases
- Control of Nonholonomic Systems Using Discrete-valued Inputs
- GaAs Solar Cell Test Facility : II-3: SYSTEM AND ARRAY
- A Second-Variational Prediction Operator for Fast Convergence in Self-Consistent Electronic-Structure Calculations
- Effects of Statical Strength and Deformability of Steels on Tensile Impact Fatigue Strengths
- SB-12-9 Field Trial of Individual Line Monitoring of PONs Using a Tunable OTDR
- 31a-Za-2 Positron Annihilation Study of Vacancies in Diamond
- B-19-9 A Hierarchical Reservoir Computing Technique for Indoor Localization based on Signal Subspace Features
- Low-Resistive Ohmic Contacts for AlGaN Channel High-Electron-Mobility Transistors Using Zr/Al/Mo/Au Metal Stack
- Possible Breakthrough for Higher $T_{\text{c}}$ Discovered in Bi(Pb)2223 Practical Tapes
- High-Efficiency 352 nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates
- Novel Technique for Improving the Signal-to-Background Ratio of X-ray Absorption Near-Edge Structure Spectrum in Fluorescence Mode and Its Application to the Chemical State Analysis of Magnesium Doped in GaN
- Physicochemical Properties of EMPyrCl-ZnCl2 Melts and Electrodeposition of Molybdenum from the Equimolar Melt at 150°C
- Novel Technique for Improving the Signal-to-Background Ratio of X-ray Absorption Near-Edge Structure Spectrum in Fluorescence Mode and Its Application to the Chemical State Analysis of Magnesium Doped in GaN
- Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures
- Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes
- Isotope Separation Effect of Granular Type Barriers
- B-13-39 Phase-mismatching FWM method for the measurement of SSMF's chromatic dispersion and nonlinear coefficients