スポンサーリンク
State Key Laboratory of Functional Material for Information, Shanghai Institute of Metallurgy, Chinese Academy of Science | 論文
- Si_2Sb_2Te_6 Phase Change Material for Low-Power Phase Change Memory Application
- Mechanism of Oxidation on Si2Sb2Te5 Phase Change Material and Its Application
- Study on Interface Adhesion between Phase Change Material Film and SiO2 Layer by Nanoscratch Test
- Phase Change Memory Based on (Sb2Te3)0.85--(HfO2)0.15 Composite Film
- Phase change line memory cell based on Ge2Sb2Te5 fabricated using focused ion beam
- Three-Dimensional Numerical Simulation of Phase-Change Memory Cell with Probe like Bottom Electrode Structure
- Phase Change Memory Cell Using Si2Sb2Te3 Material
- A Study on Microstructure and Electrical Properties of Pb_La_Ca_Ti_O_3 Thin Films Prepared by Metal-Organic Decomposition
- Crystallization Process of Amorphous GaSb_5Te_4 Film for High-Speed Phase Change Memory
- Optimization of Anomalous Cells with High SET Resistance in Phase Change Memory Arrays
- Study on Adhesive Strength between Ge2Sb2Te5 Film and Electrodes for Phase Change Memory Application