スポンサーリンク
Solutions Research Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan | 論文
- 2.4--10 GHz Low-Noise Injection-Locked Ring Voltage Controlled Oscillator in 90 nm Complementary Metal Oxide Semiconductor
- 0.1V 13GHz Transformer-Based Quadrature Voltage-Controlled Oscillator with a Capacitor Coupling Technique in 90nm Complementary Metal Oxide Semiconductor (Special Issue : Solid State Devices and Materials (2))
- A Three-Stage Inverter-Based Stacked Power Amplifier in 65 nm Complementary Metal Oxide Semiconductor Process
- A Study of Digitally Controllable Radio Frequency Micro Electro Mechanical Systems Inductor
- Planar Solenoidal Inductor in Radio Frequency Micro-Electro-Mechanical Systems Technology for Variable Inductor with Wide Tunable Range and High Quality Factor
- 1.2--17.6 GHz Ring-Oscillator-Based Phase-Locked Loop with Injection Locking in 65 nm Complementary Metal Oxide Semiconductor
- An Inverter-Based Wideband Low-Noise Amplifier in 40 nm Complementary Metal Oxide Semiconductor
- A Ring-VCO-Based Injection-Locked Frequency Multiplier with Novel Pulse Generation Technique in 65nm CMOS
- Fractionally Injection-Locked Frequency Multiplication Technique with Multi-Phase Ring Voltage-Controlled Oscillator
- Fractionally Injection-Locked Frequency Multiplication Technique with Multi-Phase Ring Voltage-Controlled Oscillator (Special Issue : Solid State Devices and Materials)
- A Ring-VCO-Based Injection-Locked Frequency Multiplier with Novel Pulse Generation Technique in 65nm CMOS