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Silicon Nano Device Lab Department Of Electrical And Computer Engineering National University Of Sin | 論文
- Formation and Thermal Stability of Nickel Germanide on Germanium Substrate
- Germanium Out-Diffusion in HfO_2 and its Impact on Electrical Properties
- The Electrical and Material Properties of HfO_xN_y Dielectric on Germanium Substrate
- Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO2 Gate Dielectrics
- The Electrical and Material Properties of HfOxNy Dielectric on Germanium Substrate
- Reliability Characteristics of poly Si-gated High Quality Chemical Vapor Deposition Hafnium Oxide Gate Dielectric
- Formation and Thermal Stability of Nickel Germanide on Germanium Substrate