スポンサーリンク
Seoul Branch Korea Basic Science Institute | 論文
- Direct Transport Measurements through an Ensemble of INAS Self-assembled Quantum Dots
- Electrical Properties of Electron-Beam Exposed Silicon Dioxides and Their Application to Nano-devices
- Stress-Driven Formation of InGaAs Quantum Dots on GaAs with Sub-Micron Platinum Pattern
- Maskless Selective Epitaxial Growth on Patterned GaAs Substrates by Metalorganic Chemical Vapor Deposition
- Electrical Properties of Heavily Carbon-Doped GaAs Epilayers Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition Using CBr_4
- Electrical Characterization of InAs/InP Self-Assembled Quantum Dots by Deep-Level Transient Spectroscopy
- Free Carrier Concentration Gradient along the c-Axis of a Freestanding Si-doped GaN Single Crystal
- Nano-Structure Fabrication and Manipulation by the Cantilever Oscillation of an Atomic Force Microscope
- Improved Crystalline Quality of GaN by Substrate Ion Beam Pretreatment
- Implantation of N Ions on Sapphire Substrate for Improvement of GaN Epilayer
- Free Carrier Concentration Gradient along the $c$-Axis of a Freestanding Si-doped GaN Single Crystal
- Influence of Intentionally Strained Sapphire Substrate on GaN Epilayers
- Electrical Characterization of InAs/InP Self-Assembled Quantum Dots by Deep-Level Transient Spectroscopy