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Semiconductor Research Center Matsushita Electric Industrial Co. Ltd. | 論文
- Plasma Ion-Doping Technique with 20 kHz Biased Electron Cyclotron Resonance Discharge : Techniques, Instrumentations and Measurement
- Characteristics of Cleaning and Carbonizing Plasmas in TEXTOR
- A New Partial Pressure Gauge for He and D_2 Using Ion Backscattering Principle
- 28a-ZB-6 InGaAs/InP多層膜界面の高分解能電子顕微鏡像
- 30a-L-2 InGaAs/InP多層結晶のHRTEM観察
- 広帯域FM変調型光映像伝送方式の検討(1)FM変調用DFB-LDの雑音特性の検討
- 低チャープ1.55μm歪MQW-DFBレーザの低変調歪特性
- Suppressing Ion Implantation Induced Oxide Charging by Utilizing Physically Damaged Oxide Region
- SCM映像伝送用MQW-DFBレーザにおける広帯域低歪化の検討
- A Small Collector-Up AlGaAs/GaAs Heterojunction Bipolar Transistor Fabricated Using H^+ Implantation
- Digital Etching of InP by Intermittent Injection of Phosphorous Precursors in Ultra-high Vacuum
- Self-Limiting Growth of Specular InP Layer by Alternate Injection of Triethylindium and Tertiarybutylphosphine in Ultrahigh Vacuum
- Digital Etching of (001) InP Substrate by Intermittent Injection of Tertiarybutylphosphine in Ultrahigh Vacuum
- Digital Etching of InP Using Tris-Dimethylaminophosphorus in Ultra-High Vacuum
- InGaAsP 歪量子井戸におけるPL発光特性の成長温度依存性
- 移動体通信用低3次変調歪DFBレーザ
- 1.3μm歪MQW-DFBレーザモジュールの高出力・多チャンネル化の検討
- 動的軸方向ホールバーニングを考慮した相互変調歪特性の解析
- 広帯域SCM伝送用低変調歪・低チャープ特性1.55μmSL-MQW-DFBレーザ
- New Technologies of KrF Excimer Laser Lithography System in 0.25 Micron Complex Circuit Patterns (Special Issue on Quarter Micron Si Device and Process Technologies)