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Semiconductor Research Center Matsushita Electric Industrial Co. Ltd. | 論文
- Quarter Micron KrF Excimer Laser Lithography (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- Infrared Absorption Spectra of C Local Mode in Si_Ge_xC_y Crystals : Semiconductors
- A New Photobleachable Positive Resist for KrF Excimer Laser Lithography : Advanced III-V Compound Semiconductors and Silicon Devices(Solid State Devices and Materials 1)
- A KrF Excimer Laser Lithography for Half Micron Devices : Techniques, Instrumentations and Measurement
- Improvement of Coupling Efficiency for Passive Alignment of Stacked Multifiber Tapes to a Vertical-Cavity Surface-Emitting Laser Array
- Improvement on Coupling Efficiency for Passive Alignment of Stacked Multi-Fiber Tapes to a Vertical-Cavity Surface-Emitting Laser Array
- Surface-Emitting Laser with a Common-Anode Configuration for Application to the Photonic Parallel Memory
- High-Power 650-nm-Band AlGaInP Visible Laser Diodes Fabricated by Reactive Ion Beam Etching Using Cl_2/N_2 Mixture
- Reduction of Aspect Ratio in 650 nm-Band Self-Sustained-Pulsing Lasers with Saturable-Absorbing Layer
- Extremely Low Astigmatism and Aspect Ratio in 650nm-Band Self-Pulsing AlGaInP Lasers with Strained-Quantum-Well Saturable-Absorbing Layer
- 650nm-Band High Power AlGaInP Visible Laser Diodes Fabricated by Reactive Ion Beam Etching Using Cl_2/N_2 Mixture
- 広帯域SCM伝送用歪MQW-DFBレ-ザモジュ-ル (特集 マルチメディアを支える半導体) -- (デバイス)
- Strain Effect on 630 nm GaInP/AlGaInP Multi-Quantum Well Lasers
- Overlay Accuracy Measurement Technique Using the Latent Image on a Chemically Amplified Resist
- A New Analytical Technique for Evaluating Standing Wave Effect of Chemically Amplified Positive Resist
- A Novel Millimeter-Wave IC on Si Substrate Using Flip-Chip Bonding Technology
- Low-Power Technology for GaAs Front-End ICs
- Compound-Source Molecular Beam Epitaxy for ZnCdSe/ZnSSe/ZnMgSSe Laser Structure
- New Evaluation Method of Resist Coating Using Heterodyne Holographic Wafer Alignment
- Room Temperature 339 nm Emission from Al_Ga_N/Al_Ga_N Double Heterostructure Light-Emitting Diode on Sapphire Substrate