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Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd. | 論文
- Plasma Ion-Doping Technique with 20 kHz Biased Electron Cyclotron Resonance Discharge : Techniques, Instrumentations and Measurement
- A Small Collector-Up AlGaAs/GaAs Heterojunction Bipolar Transistor Fabricated Using H^+ Implantation
- Optical Gain Calculation of Wurtzite GaN/AlGaN Quantum Well Laser
- Improvement of Coupling Efficiency for Passive Alignment of Stacked Multifiber Tapes to a Vertical-Cavity Surface-Emitting Laser Array
- Improvement on Coupling Efficiency for Passive Alignment of Stacked Multi-Fiber Tapes to a Vertical-Cavity Surface-Emitting Laser Array
- Surface-Emitting Laser with a Common-Anode Configuration for Application to the Photonic Parallel Memory
- An Asymptotically Zero Power Charge-Recycling Bus Architecture for Battery-Operated Ultrahigh Data Rate ULSI's(Special Issue on the 1994 VLSI Circuits Symposium)
- A Low Power Bus Architecture with Local and Global Charge-Recycling Bus Techniques for Battery-Operated Ultra-High Data Rate ULSI's
- Strain Effect on 630 nm GaInP/AlGaInP Multi-Quantum Well Lasers
- A New Analytical Technique for Evaluating Standing Wave Effect of Chemically Amplified Positive Resist
- A Novel Millimeter-Wave IC on Si Substrate Using Flip-Chip Bonding Technology
- Low-Power Technology for GaAs Front-End ICs
- New Evaluation Method of Resist Coating Using Heterodyne Holographic Wafer Alignment
- New Structure of 1.3 μm Strained-Layer Multi-Quantum Well Complex-Coupled Distributed Feedback Lasers
- Novel Structure of 1.3μm Strained-Layer MQW Complex-Coupled DFB Lasers
- Metalorganic Vapor Phase Epitaxy Growth of a High-Quality GaN/InGaN Single Quantum Well Structure Using a Misoriented SiC Substrate
- MOVPE Growth of High Quality GaN/InGaN Single Quantum Well Structure Using Misoriented SiC Substrate
- Novel Surface Reaction Model in Dry-Etching Process Simulator
- Computer Aided Proximity Effect Correction System in Photolithography : Lithography Technology
- Plasma-Induced Transconductance Degradation of nMOSFET with Thin Gate Oxide