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Semiconductor Research Center, Matsushita Electric Industrial, Co., Ltd. | 論文
- Suppressing Ion Implantation Induced Oxide Charging by Utilizing Physically Damaged Oxide Region
- Overlay Accuracy Measurement Technique Using the Latent Image on a Chemically Amplified Resist
- Electron Paramagnetic Resonance Studies of Defects in Oxygen-Implanted Silicon
- New Methods for ultra-Shallow Boron Doping by Using Plasma, Plasma-Less and Sputtering
- A Universal Relationship between Boron Penetration and Gate Oxide Reliability for Surface Channel PMOSFET
- High Reliability Trench Isolation Technology with Elevated Field Oxide Structure for Sub-Quarter Micron CMOS Devices
- CMP with Pad-Press Ring for Superior Uniformity Performance