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Semiconductor Laboratory, Mitsubishi Electric Corporation | 論文
- High Temperature Single Mode CW Operation with a TJS Laser Using a Semi-Insulating GaAs Substrate : B-5: LASERS (2)
- Gain Spectra in Single Mode Oscillating (AlGa)As TJS Lasers
- Flip-Chip Mounted GaAs Power FET with Improved Performances in X to Ku Band : B-1: GaAs IC
- Photoluminescence Study of Epitaxial AlGaAs Layer Grown from Pre-Heated Ga Solution
- A 100 W Static Induction Transistor Operating at 1 GHz : A-6: CHARGE TRANSFER DEVICES/SIT AND OTHER DEVICES
- Amorphous Solar Cells Using a-Si: H and a-SiGe: H Films : III-4: AMORPHOUS SOLAR CELLS (3) : Device Physics
- Refractive Index of In_Ga_As_P_ at Its Laser Oscillating Wavelength of 1.2 μm
- High Efficiency Al_xGa_As-GaAs Solar Cells with High Open-Circuit Voltage and High Fill Factor : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
- A New Heat Treatment Technique for No Thermal Conversion of Semi-Insulating GaAs Wafers : B-5: COMPOUND SEMICONDUCTOR DEVICE TECHNOLOGY