Amorphous Solar Cells Using a-Si: H and a-SiGe: H Films : III-4: AMORPHOUS SOLAR CELLS (3) : Device Physics
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1982-12-20
著者
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Nakamura Genshiro
Semiconductor R&d Dept. Lsi Research And Development Lab. Mitsubishi Electric Corp.
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YUKIMOTO Yoshinori
Semiconductor Laboratory, Mitsubishi Electric Corporation
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SATO Kazuhiko
Semiconductor R&D Dept. LSI Research and Development Lab. Mitsubishi Electric Corp.
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Yukimoto Yoshinori
Semiconductor R&d Dept. Lsi Research And Development Lab. Mitsubishi Electric Corp.
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Yukimoto Yoshinori
Semiconductor Laboratory Mitsubishi Electric Corp.
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Sato Kazuhiko
Semiconductor R&d Dept. Lsi Research And Development Lab. Mitsubishi Electric Corp.
関連論文
- Broadening of Spectral Response Width by a-Si/aSiGe p-i-n type Solar Cells : III-4: AMORPHOUS SOLAR CELLS : Device Performances
- A 100 W Static Induction Transistor Operating at 1 GHz : A-6: CHARGE TRANSFER DEVICES/SIT AND OTHER DEVICES
- Amorphous Solar Cells Using a-Si: H and a-SiGe: H Films : III-4: AMORPHOUS SOLAR CELLS (3) : Device Physics
- A New Bipolar Transistor-GAT : A-7: OTHER SILICON DEVICES
- A New Transistor with Improved Safe Operating Area : A-6: CHARGE TRANSFER DEVICES/SIT AND OTHER DEVICES