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Semiconductor And Integrated Circuits Division Hitachi Ltd. | 論文
- Preliminary Pressure Measurement in the Range of 10^ Pa Using a Picosecond Pulsed Laser
- Nonresonant Multiphoton Ionization of H_2, CO and CO_2 by Second Harmonics of Picosecond YAG Laser
- Measurement of Extreme-High-Vacuum Pressure by Laser Ionization
- Multiphoton Ionization of Xe and Kr Atoms by an ArF Excimer Laser
- A New Ion Counting System Devised for Mass-Selective Detection of Sputtered Neutrals in Laser SNMS
- Nonresonant Multiphoton Ionization of He and Ne Atoms
- Dependence of the Nonresonant Laser Ionization of Rare Gases on Laser Wavelength
- Detection of Sputtered Neutral Atoms by Nonresonant Multiphoton Ionization : Surfaces, Interfaces and Films
- Preliminary Results of Vacuum Pressure Measurement by Laser Ionization Method
- Tape Conductor Fabrication Process for High-T_c Ba_2YCu_3O_ : Electrical Properties of Condensed Matter
- Excellence of Gate Oxide Integrity in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits Based on P^-/P^- Thin-Film Epitaxial Silicon Wafers
- Dependence of Warpage of Czochralski-Grown Silicon Wafers on Oxygen Concentration and Its Application to MOS Image-Sensor Device
- Estimation of Epitaxial Temperature Using X-Ray Diffraction for Si Films Grown on (100) Si by Molecular Beam Epitaxy
- X-Ray Diffraction from Low-Temperature-Grown Silicon Films with Small Surface Roughness
- Main Cause of Surface Waveguides Formed under LiNbO_3 Crystal Surface during Thermal Treatment
- Adsorption and Thermal or Photodecomposition of Triethylgallium and Trimethylgallium on Si(111)-7×7
- Prevention of Thermal Degradations by Using Dehydrated LiNbO_3 Crystal
- Analysis of the Thickness Edge Mode in Piezoelectric Plates and Its Application to Resonators
- Photochemical Decomposition of Triethylgallium on Si(111) Studied by Means of STM, LEED, AES and Mass Spectroscopy
- Oxidation-Induced Stacking Faults Dependent on Oxygen Concentration in Czochralski-Growrn Silicon Wafers