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School of Science and Engineering, Waseda University | 論文
- Diffusion of Molecular and Atomic Oxygen in Silicon Oxide
- Magnetic Ordering in One-Dimensional System CoNb_2O_6 with Competing Interchain Interactions
- Intrinsic Defects in ZnO Films Grown by Molecular Beam Epitaxy
- Growth of ZnO on Si Substrate by Plasma-Assisted Molecular Beam Epitaxy
- Current-Voltage Characteristics for a Point Contact Composed of Two Different Peierls Conductors(Condensed Matter and Statistical Physics)
- Fabrication of Adenosine Triphosphate-Molecule Recognition Chip by Means of Bioluminous Enzyme Luciferase : Cross-Disciplinary Areas
- Nucleation and Growth of Cu Adsorbates on Hydrogen-Terminated Si(111) Surface in Solution
- Nonscalability of Alpha-Particle-Induced Charge Collection Area
- Reverse-Mode Single Ion Beam Induced Charge (R-mode SIBIC) Imaging for the Test of Total Dose Effects in n-ch Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)
- {111} Facet Formation during Lateral Solid-Phase Epitaxy of Silicon
- Analysis of Interactions between Green Fluorescent Protein and Silicon Substrates Using Molecular Dynamics Simulations
- Large-Scale Atomistic Modeling of Thermally Grown SiO_2 on Si(111) Substrate
- Effects of Thermal History on Residual Order of Thermally Grown Silicon Dioxide
- Novel Interatomic Potential Energy Function for Si, O Mixed Systems
- Fabrication of ultrathin Si Channel Wall For Vertical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DG MOSFET) by Using Ion-Bombardment-Retarded Etching (IBRE)
- Construction of a High-Speed Liquid Flow Apparatus Operated by Compressed Air
- Anisotropic Specific Heat of CoNb_2O_6 in Magnetic Fields
- Impact of Structural Strained Layer near SiO_2/Si Interface on Activation Energy of Time-Dependent Dielectric Breakdown
- Dominant Role of Corner Holes in the Decomposition Process of Silicon Islands on Si(111) Surfaces
- Consideration on the Quantitativeness of Reflection High Energy Electron Diffraction Intensity as a Tool to Monitor the Coverage of the Si(111) Surface by 7×7 Domains